recombination velocity meaning in Chinese

复合速度, 半导体表面上的复合速度

Acquisition of low surface recombination velocity on surface of p - type si
单晶低表面复合速度的获得
Surface recombination velocity
表面复合速度
From the experiment results and the normalization results , the surface recombination velocities of silicon pn junction were obtained
通过测量结果和计算结果的归一化比较，获得了其表面复合速率。
Depending on the image method and point source approximation method , the physic model was established , and the formula of photo - current versus surface recombination velocity was obtained
导出了光电流与表面复合速率相应关系的计算公式，确定了可进行电量测量的实验装置。
The pc id has been used in order to analyse the influence of surface recombination on the performance of crystalline silicon solar cell . in different surface concentration , the relation of the surface recombination velocity and the performance ( voc , jsc , g ) of crystalline silicon solar cell is discussed
采用pc1d就表面复合对太阳电池性能的影响进行理论计算，探讨了晶体硅太阳电池不同表面浓度条件下，表面复合速度与太阳电池开路电压、短路电流以及转换效率之间的关系。

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